IXYS Colorado Introduces the IXRFD615X2 Dual 15 A High Speed RF MOSFET Driver
FORT COLLINS, Colo., November 5, 2015 --- IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced today the introduction of its IXRFD615X2 dual CMOS high-speed, high-current MOSFET gate driver by its IXYS Colorado division.
The IXRFD615X2 dual CMOS gate driver is designed and optimized to drive MOSFETs in Push-Pull and resonant Class E Push-Pull HF RF applications, as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.
It can source and sink 15 A of peak current per driver while providing voltage rise and fall times of less than 10 ns and minimum pulse widths of 8 ns. The dual driver offers more flexibility over single output gate drivers by providing two independent ground referenced drivers that can be used in Push-Pull and resonant class E Push-Pull topologies along with differential drive transformer, transducer applications. The driver’s features and wide safety margins in operating voltage and power make the IXRFD615X2 unmatched in performance and value.
The surface mount IXRFD615X2 is packaged in an IXYSRF package incorporating advanced layout techniques to minimize stray lead inductances. This low-inductance, high-power package enables RF high-frequency operations through excellent thermal characteristics.
- Isolated substrate
- High isolation voltage ( in excess of 2500 V)
- Excellent thermal transfer
- Increased temperature and power cycling capability
- High Peak Sink and Source Current
- Low Output Impedance
- Latch-up protected
- Low quiescent supply current
- No Beryllium Oxide (BeO) or other hazardous materials
- Optimized for RF and high speed
- Easy to mount, no insulators needed
- High power density
- RoHS compliant
- Push-Pull RF Generators
- Multi-MHz Switch Mode Supplies
- Pulse Transformer Drivers
- Pulse Laser Diode Drivers
- Pulse Generators
“The IXRFD615X2 is an exciting addition to IXYSRF’s growing family of components for high frequency power RF system design,” commented Stephen Krausse, General Manager of IXYS Colorado. “It offers more flexible design options in high frequency applications over single output gate drivers.”
Safe Harbor Statement
Any statements contained in this press release that are not statements of historical fact, including the performance, rating, availability, reliability, operation and suitability of products for various applications, may be deemed to be forward-looking statements. There are a number of important factors that could cause the results of IXYS to differ materially from those indicated by these forward-looking statements, including, among others, risks detailed from time to time in the Company's SEC reports, including its Form 10-Q for the fiscal quarter ended September 30, 2015. The Company undertakes no obligation to publicly release the results of any revisions to these forward-looking statements.