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IXYSRF News & Announcements

DVRFD615X2 High Speed MOSFET Gate Drive Demonstration Board

IXYS Colorado Introduces the DVRFD615X2 High Speed MOSFET Gate Drive Demonstration Board

IXRFD615X2 Dual 15 A High Speed RF MOSFET Driver

FORT COLLINS, Colo., September 29, 2016 --- IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced today the introduction of the DVRFD615X2 high speed MOSFET demonstration board by its IXYS Colorado division

IXRFD615X2 Dual 15 A High Speed RF MOSFET Driver

IXYS Colorado Introduces the IXRFD615X2 Dual 15 A High Speed RF MOSFET Driver

IXRFD615X2 Dual 15 A High Speed RF MOSFET Driver

FORT COLLINS, Colo., November 5, 2015 --- IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced today the introduction of its IXRFD615X2 dual CMOS high-speed, high-current MOSFET gate driver by its IXYS Colorado division.

IXZ631 Series Integrated High-Speed Gate Driver/MOSFET RF Modules

IXYS Colorado Introduces the IXZ631 Series Integrated High-Speed Gate Driver/MOSFET RF Modules

IXZ631 Series Integrated High-Speed Gate Driver/MOSFET RF Modules

FORT COLLINS, Colo., Feb. 18 2014---IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced today the introduction of its IXZ631 Series CMOS high-speed, high-current integrated gate driver and MOSFET modules by its IXYS Colorado division. The modules are specifically designed for Class D, E, HF and RF applications at up to 27 MHz, as well as other applications requiring high-speed, high-power switching.

DVRFD630 and DVRFD631 RF MOSFET Gate Driver Development Board Product Release

IXYS Colorado Introduces the DVRFD630 and DVRFD631 RF MOSFET Gate Driver Development Boards

DVRFD630-631

FORT COLLINS, Colo., Dec. 17 2013---IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced today the introduction of the DVRFD630 and DVRFD631 RF MOSFET Gate Driver Development Boards by its IXYS Colorado division.

SS150 and SS275 SiC Diode Product Release

IXYS Introduces the SS150 and SS275 High Power SiC Diodes

SS150 and SS275 High Power SiC Diodes

Fort Collins, CO, August 27, 2013 --- IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced today the introduction of the SS150 and SS275 Series High Power Silicon Carbide (SiC) Diodes by its IXYS Colorado division. Three diode configurations provide designers with flexible connection and layout options. Packaged in our low inductance, surface mount DE Series package, these products provide excellent switching performance.

IXRFD630 and IXRFD631 Product Release

IXYS Colorado Introduces the IXRFD630 and IXRFD631 High Power RF Drivers

IXRFD631 High Power RF Gate Driver

FORT COLLINS, Colo., June 6th 2013---Fort Collins, CO, June 6, 2013 --- IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced today the introduction of the IXRFD630 and IXRFD631 High Power RF Drivers by its IXYS Colorado division. This driver succeeds the DEIC420 and DEIC421 and represents the next generation of RF driver for 13.56 and 27.12 Mhz RF power.