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SS275TC12205 1200V 5A SiC Schottky Diode

SS275TC12205 1200V 5A SiC Schottky Diode

Description

Three 1200 V, 5 A Silicon Carbide Schottky diodes mounted on a common Aluminum Nitride substrate in the DE275 surface mount package. The electrically isolated, low inductance DE275 package also provides reduced thermal resistance for increased power handling.

Configurations:

TA- Triple Anode, all three anodes tied together
TC- Triple Cathode, all three cathodes tied together
TI- Triple Independent, no common connections shared between diodes

Features

  • 1200 V SiC Schottky Diode
  • Surface Mount Package
  • Zero Reverse Recovery
  • Zero Forward Recovery
  • High Frequency Operation
  • Temperature Independent Behavior
  • Positive Temperature Coefficient for VF

Advantages

  • Increased overall system efficiency compared to Silicon diodes
  • Reduced cooling requirements.
  • High frequency capable
  • Reduction in EMI
  • Increased reliability due to lower operating temperatures

Applications

  • MHz Switch Mode Power Supplies
  • High Frequency Converters
  • Resonant Converters
  • Rectifier Circuits