Drivers & SiC Diodes
Click here for our RF MOSFET Drivers Product Selection Guide.
IXYSRF MOSFET Gate Drive ICs and Silicon Carbide Schottky diodes are designed to optimize the high-frequency, high-power performance of switching circuits using IXYSRF high speed MOSFETs.
Packaged in our surface mount DE Series RF packages to minimize stray lead inductance and to maximize thermal dissipation, IXYSRF gate drivers and SiC diodes offer the highest switching and thermal performance of any commercially available devices.
Our CMOS high-speed, high-current gate drivers are specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths, producing voltage rise and fall times of less than 4 nanoseconds and minimum pulse widths of 8 nanoseconds.
Our Silicon Carbide diodes provide extremely fast switching, high frequency operation, with zero recovery and temperature independent behavior. Coupled with the low inductance DE-Series RF package, these diodes can be utilized in any number of fast switching diode circuits or high frequency converter applications.