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Drivers & SiC Diodes

High frequency MOSFET drivers and Silicon Carbide diodesClick here for our RF MOSFET Drivers Product Selection Guide.

IXYSRF MOSFET Gate Drive ICs and Silicon Carbide Schottky diodes are designed to optimize the high-frequency, high-power performance of switching circuits using IXYSRF high speed MOSFETs.

Packaged in our surface mount DE Series RF packages to minimize stray lead inductance and to maximize thermal dissipation, IXYSRF gate drivers and SiC diodes offer the highest switching and thermal performance of any commercially available devices.

Our CMOS high-speed, high-current gate drivers are specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths, producing voltage rise and fall times of less than 4 nanoseconds and minimum pulse widths of 8 nanoseconds.

Our Silicon Carbide diodes provide extremely fast switching, high frequency operation, with zero recovery and temperature independent behavior. Coupled with the low inductance DE-Series RF package, these diodes can be utilized in any number of fast switching diode circuits or high frequency converter applications.

 

IXRFD615 15A RF MOSFET Driver

IXRFD615 15A RF MOSFET Driver

The IXRFD615 is a CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.

IXRFD615X2 15A Dual Low-Side RF MOSFET Driver

IXRFD615X2 15A Dual Low-Side RF MOSFET Driver

The IXRFD615X2 is a dual 15 A RF MOSFET driver that can deliver up to 15 A of peak current and can operate over a wide power supply range of voltage. It is a low inductance device mounted in a surface mount package.

IXRFD630 DE-275 30A CMOS RF Gate Driver

IXRFD630 DE-275 30A CMOS RF Gate Driver

The IXRFD630 is a CMOS high speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.

IXRFD631 DE-275 30A CMOS RF Gate Driver

IXRFD631 DE-275 30A CMOS RF Gate Driver

The IXRFD631 is a CMOS high speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.

SS150TA60110  600V 10A SiC Schottky Diode

SS150TA60110 600V 10A SiC Schottky Diode

Three 600V 10A Silicon Carbide Schottky diodes connected in a common anode configuration.

SS150TC60110  600V 10A SiC Schottky Diode

SS150TC60110 600V 10A SiC Schottky Diode

Three 600V 10A Silicon Carbide Schottky diodes connected in a triple cathode, all three cathodes tied together, configuration. 

SS150TI60110  600V 10A SiC Schottky Diode

SS150TI60110 600V 10A SiC Schottky Diode

Three 600V 10A Silicon Carbide Schottky diodes connected in a triple independent, no common connections shared between diodes, configuration.

SS275TA12205 1200V 5A SiC Schottky Diode

SS275TA12205 1200V 5A SiC Schottky Diode

Three 1200V 5A Silicon Carbide Schottky diodes connected in a common anode configuration.

SS275TC12205 1200V 5A SiC Schottky Diode

SS275TC12205 1200V 5A SiC Schottky Diode

Three 1200V 5A Silicon Carbide Schottky diodes connected in a triple cathode, all three cathodes tied together, configuration.

SS275TI12205 1200V 5A SiC Schottky Diode

SS275TI12205 1200V 5A SiC Schottky Diode

Three 1200V 5A Silicon Carbide Schottky diodes connected in a triple independent, no common connections shared between diodes, configuration.