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600 Volt Components

IXZ316N60 600V 18A DE-375

IXZ316N60 600V 18A DE-375

N-Channel Enhancement Mode MOSFET VDSS = 600V ID25 = 18A PDC = 880W Package- DE375 Designed for low capacitance and optimized for RF and high speed switching

IXZH16N60 600V 18A TO-247

IXZH16N60 600V 18A TO-247

N-Channel Enhancement Mode MOSFET VDSS = 600V ID25 = 18A PDC = 250W Package - TO-247. Designed for low capacitance and optimized for RF and high speed switching.

IXZR16N60 600V 18A ISOPLUS247

IXZR16N60 600V 18A ISOPLUS247

N-Channel Enhancement Mode MOSFET VDSS = 600V ID25 = 18A PDC = 350W Package - ISOPLUS247. Designed for low capacitance and optimized for RF and high speed switching. Available in multiple lead configurations

IXZR16N60A-00 600V 18A ISOPLUS247

IXZR16N60A-00 600V 18A ISOPLUS247

N-Channel Enhancement Mode MOSFET VDSS = 600V ID25 = 18A PDC = 350W Package - ISOPLUS247. Designed for low capacitance and optimized for RF and high speed switching. Available in multiple lead configurations

IXZR16N60B-00 600V 18A ISOPLUS247

IXZR16N60B-00 600V 18A ISOPLUS247

N-Channel Enhancement Mode MOSFET VDSS = 600V ID25 = 18A PDC = 350W Package - ISOPLUS247. Designed for low capacitance and optimized for RF and high speed switching. Available in multiple lead configurations

SS150TA60110  600V 10A SiC Schottky Diode

SS150TA60110 600V 10A SiC Schottky Diode

Three 600V 10A Silicon Carbide Schottky diodes connected in a common anode configuration.

SS150TC60110  600V 10A SiC Schottky Diode

SS150TC60110 600V 10A SiC Schottky Diode

Three 600V 10A Silicon Carbide Schottky diodes connected in a triple cathode, all three cathodes tied together, configuration. 

SS150TI60110  600V 10A SiC Schottky Diode

SS150TI60110 600V 10A SiC Schottky Diode

Three 600V 10A Silicon Carbide Schottky diodes connected in a triple independent, no common connections shared between diodes, configuration.