TwitterFacebookGoogle PlusLinkedIn

Contact Us! +1-970-493-1901 sales@ixyscolorado.com

1200 Volt Components

IXZ308N120 1200V 8A DE-375

IXZ308N120 1200V 8A DE-375

N-Channel Enhancement Mode MOSFET VDSS = 1200V ID25 = 8A PDC = 880W Package- DE375 Designed for low capacitance and optimized for RF and high speed switching.

IXZH08N120 1200V 9A TO-247

IXZH08N120 1200V 9A TO-247

N-Channel Enhancement Mode MOSFET VDSS = 1200V ID25 = 9A PDC = 250W Package - TO-247. Designed for low capacitance and optimized for RF and high speed switching.

IXZR08N120 1200V 9A ISOPLUS247

IXZR08N120 1200V 9A ISOPLUS247

N-Channel Enhancement Mode MOSFET VDSS = 1200V ID25 = 9A PDC = 250W Package - ISOPLUS247. Designed for low capacitance and optimized for RF and high speed switching. Available in multiple lead configurations

IXZR08N120A-00 1200V 9A ISOPLUS247

IXZR08N120A-00 1200V 9A ISOPLUS247

N-Channel Enhancement Mode MOSFET VDSS = 1200V ID25 = 9A PDC = 250W Package - ISOPLUS247. Designed for low capacitance and optimized for RF and high speed switching. Available in multiple lead configurations

IXZR08N120B-00 1200V 9A ISOPLUS247

IXZR08N120B-00 1200V 9A ISOPLUS247

N-Channel Enhancement Mode MOSFET VDSS = 1200V ID25 = 9A PDC = 250W Package - ISOPLUS247. Designed for low capacitance and optimized for RF and high speed switching. Available in multiple lead configurations

SS275TA12205 1200V 5A SiC Schottky Diode

SS275TA12205 1200V 5A SiC Schottky Diode

Three 1200V 5A Silicon Carbide Schottky diodes connected in a common anode configuration.

SS275TC12205 1200V 5A SiC Schottky Diode

SS275TC12205 1200V 5A SiC Schottky Diode

Three 1200V 5A Silicon Carbide Schottky diodes connected in a triple cathode, all three cathodes tied together, configuration.

SS275TI12205 1200V 5A SiC Schottky Diode

SS275TI12205 1200V 5A SiC Schottky Diode

Three 1200V 5A Silicon Carbide Schottky diodes connected in a triple independent, no common connections shared between diodes, configuration.