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TO-247 Devices

IXFH60N20F 200V 60A TO-247

IXFH60N20F 200V 60A TO-247

N-Channel Enhancement Mode MOSFET VDSS = 200V ID25 = 25A PDC = 590W Optimized for RF and high speed switching at frequencies to >100MHz

IXZH18N50 500V 19A TO-247

IXZH18N50 500V 19A TO-247

N-Channel Enhancement Mode MOSFET VDSS = 500V ID25 = 18A PDC = 250W Package - TO-247. Designed for low capacitance and optimized for RF and high speed switching.

IXFH21N50F 500V 21A TO-247

IXFH21N50F 500V 21A TO-247

N-Channel Enhancement Mode MOSFET VDSS = 500V ID25 = 21A PDC = 300W IXFH TO-247 AD package IXFT TO-268 surface mount package

IXZH16N60 600V 18A TO-247

IXZH16N60 600V 18A TO-247

N-Channel Enhancement Mode MOSFET VDSS = 600V ID25 = 18A PDC = 250W Package - TO-247. Designed for low capacitance and optimized for RF and high speed switching.

IXFH6N100F 1000V 6A TO-247

IXFH6N100F 1000V 6A TO-247

N-Channel Enhancement Mode MOSFET VDSS = 100V ID25 = 6A PDC = 180W IXFH TO-247 AD package IXFT TO-268 surface mount package

IXFH12N100F 1000V 12A TO-247

IXFH12N100F 1000V 12A TO-247

N-Channel Enhancement Mode MOSFET VDSS = 100V ID25 = 12A PDC = 300W IXFH TO-247 AD package IXFT TO-268 surface mount package

IXZH08N120 1200V 9A TO-247

IXZH08N120 1200V 9A TO-247

N-Channel Enhancement Mode MOSFET VDSS = 1200V ID25 = 9A PDC = 250W Package - TO-247. Designed for low capacitance and optimized for RF and high speed switching.