TwitterFacebookGoogle PlusLinkedIn

Contact Us! +1-970-493-1901 sales@ixyscolorado.com

DE-Series Devices

DE-Series DevicesThe DE-SERIES Fast PowerTM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high frequency, high power applications. DEI's Fast PowerTM technology features low insertion inductance (≈2nH), and a low profile low cost plastic package, with a RthJC as low as 0.08ºC/W, which provides exceptional switching speeds and power handling capabilities.

For more details on the unique properties of the DE-Series devices, see the "Introduction to The DE-Series MOSFET" application note. 

DE-150DE-275DE-275X2DE-375DE-475

150-101N09A-00 100V 9A DE-150

150-101N09A-00 100V 9A DE-150

N-Channel Enhancement Mode MOSFET VDSS = 100V ID25 = 9A PDC = 200W Optimized for RF and high speed switching at frequencies to >100MHz

275-101N30A-00 100V 30A DE-275

275-101N30A-00 100V 30A DE-275

N-Channel Enhancement Mode MOSFET VDSS = 100V ID25 = 30A PDC = 550W Optimized for RF and high speed switching at frequencies to >100MHz

150-201N09A-00 200V 9A DE-150

150-201N09A-00 200V 9A DE-150

N-Channel Enhancement Mode MOSFET VDSS = 200V ID25 = 9A PDC = 200W Optimized for RF and high speed switching at frequencies to >100MHz

275-201N25A-00 200V 25A DE-275

275-201N25A-00 200V 25A DE-275

N-Channel Enhancement Mode MOSFET VDSS = 200V ID25 = 25A PDC = 590W Optimized for RF and high speed switching at frequencies to >100MHz

150-501N04A-00 500V 4.5A DE-150

150-501N04A-00 500V 4.5A DE-150

N-Channel Enhancement Mode MOSFET VDSS = 500V ID25 = 4.5A PDC = 200W Optimized for RF and high speed switching at frequencies to >100MHz

IXZ210N50L2 500V 10A DE-275

IXZ210N50L2 500V 10A DE-275

N-Channel Enhancement Mode MOSFET VDSS = 500V ID25 = 10A PDC = 470W Package- DE275 Designed for low capacitance and optimized for linear RF operation

IXZ2210N50L2 500V 10A DE-275X2

IXZ2210N50L2 500V 10A DE-275X2

Common Source Push-Pull Pair N-Channel Enhancement Mode MOSFET VDSS = 500V ID25 = 10A PDC = 940W Package- DE275x2 Designed for low capacitance and optimized for linear RF operation.

275-501N16A-00 500V 16A DE-275

275-501N16A-00 500V 16A DE-275

N-Channel Enhancement Mode MOSFET VDSS = 500V ID25 = 16A PDC = 590W Optimized for RF and high speed switching at frequencies up to 100MHz

275X2-501N16A-00 500V 16A DE-275X2

275X2-501N16A-00 500V 16A DE-275X2

Common Source Push-Pull Pair N-Channel Enhancement Mode MOSFET VDSS = 500V ID25 = 16A each MOSFET PDC = 1180W The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz

IXZ318N50 500V 19A DE-375

IXZ318N50 500V 19A DE-375

N-Channel Enhancement Mode MOSFET VDSS = 500V ID25 = 19A PDC = 880W Package- DE375 Designed for low capacitance and optimized for RF and high speed switching

375-501N21A-00 500V 25A DE-375

375-501N21A-00 500V 25A DE-375

N-Channel Enhancement Mode MOSFET VDSS = 500V ID25 = 25A PDC = 940W Optimized for RF and high speed switching at frequencies up to 50MHz

375-501N30A 500V 30A DE-375

375-501N30A 500V 30A DE-375

N-Channel Enhancement Mode MOSFET VDSS = 500V ID25 = 30A PDC = 940W Optimized for RF and high speed switching at frequencies up to 50MHz

475-501N44A-00 500V 48A DE-475

475-501N44A-00 500V 48A DE-475

N-Channel Enhancement Mode MOSFET VDSS = 500V ID25 = 48A PDC = 1800W Optimized for RF and high speed switching at frequencies up to 30MHz

IXZ316N60 600V 18A DE-375

IXZ316N60 600V 18A DE-375

N-Channel Enhancement Mode MOSFET VDSS = 600V ID25 = 18A PDC = 880W Package- DE375 Designed for low capacitance and optimized for RF and high speed switching

150-102N02A-00 1000V 2A DE-150

150-102N02A-00 1000V 2A DE-150

N-Channel Enhancement Mode MOSFET VDSS = 1000V ID25 = 2A PDC = 200W Optimized for RF and high speed switching at frequencies up to 100MHz

275-102N06A-00 1000V 8A DE-275

275-102N06A-00 1000V 8A DE-275

N-Channel Enhancement Mode MOSFET VDSS = 1000V ID25 = 8A PDC = 590W Optimized for RF and high speed switching at frequencies up to 100MHz

275X2-102N06A-00 1000V 8A DE-275X2

275X2-102N06A-00 1000V 8A DE-275X2

Common Source Push-Pull Pair N-Channel Enhancement Mode MOSFET VDSS = 1000V ID25 = 8A each MOSFET PDC = 1180W Optimized for RF and high speed switching at frequencies up to 100MHz

375-102N10A-00 1000V 10A DE-375

375-102N10A-00 1000V 10A DE-375

N-Channel Enhancement Mode MOSFET VDSS = 1000V ID25 = 10A PDC = 940W Optimized for RF and high speed switching at frequencies up to 50MHz

375-102N12A-00 1000V 12A DE-375

375-102N12A-00 1000V 12A DE-375

N-Channel Enhancement Mode MOSFET VDSS = 1000V ID25 = 12A PDC = 940W Optimized for RF and high speed switching at frequencies up to 50MHz

375-102N15A 1000V 15A DE-375

375-102N15A 1000V 15A DE-375

N-Channel Enhancement Mode MOSFET VDSS = 1000V ID25 = 15A PDC = 940W Optimized for RF and high speed switching at frequencies up to 50MHz

[12  >>